advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 40v simple drive requirement r ds(on) 11.5m fast switching characteristic i d 11a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice rating 40 40 + 20 11 AP9967GM-HF halogen-free product 201211051 1 parameter drain-source voltage gate-source voltage continuous drain current 3 , v gs @ 10v continuous drain current 3 , v gs @ 10v 8.8 pulsed drain current 1 2.5 parameter total power dissipation operating junction temperature range -55 to 150 thermal data storage temperature range -55 to 150 ap9967 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. s s s g d d d d so-8 g d s www.datasheet.net/ datasheet pdf - http://www..co.kr/
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - 9.1 11.5 m v gs =4.5v, i d =6a - 13 17 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forward transconductance v ds =10v, i d =10a - 20 - s i dss drain-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =10a - 11.5 18.4 nc q gs gate-source charge v ds =20v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time v ds =20v - 8 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 -26- ns t f fall time v gs =10v - 6.5 - ns c iss input capacitance v gs =0v - 980 1570 pf c oss output capacitance v ds =15v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 2 4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.1a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 18 - ns q rr reverse recovery charge di/dt=100a/s - 12 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP9967GM-HF 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. www.datasheet.net/ datasheet pdf - http://www..co.kr/
a p9967gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 8 10 12 14 16 18 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =6a t a =25 o c 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.9 1.4 1.9 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 10a v g =10v 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =1ma www.datasheet.net/ datasheet pdf - http://www..co.kr/
AP9967GM-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 2 4 6 8 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v i d =10a 0 400 800 1200 1600 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 10 20 30 40 50 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 4 8 12 16 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) t j = -40 o c www.datasheet.net/ datasheet pdf - http://www..co.kr/
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